MR25H10MDCR容量MRAM存储器

FEATURES 
? No write delays
? Unlimited write endurance
? Data retention greater than 20 years
? Automatic data protection on power loss
? Block write protection
? Fast, simple SPI interface with up to 40 MHz clock rate
? 2.7 to 3.6 Volt power supply range
? Low current sleep mode
? Industrial temperatures
? Available in 8-pin DFN or 8-pin DFN Small Flag RoHS-compliant packages
? Direct replacement for serial EEPROM, Flash, FeRAM
? AEC-Q100 Grade 1 Option

INTRODUCTION
The MR25H10 is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR25H10 offers serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance.
Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes. The MR25H10 is the ideal memory solution for applications that must store and retrieve data and programs quickly using a small number of I/O pins.
The MR25H10 is available in either a 5 mm x 6 mm 8-pin DFN package or a 5 mm x 6 mm 8-pin DFN Small Flag package. Both are compatible with serial EEPROM, Flash, and FeRAM products.
The MR25H10 provides highly reliable data storage over a wide range of temperatures. The product is offered with Industrial (-40° to +85 °C) and AEC-Q100 Grade 1 (-40°C to +125 °C) operating temperature range options.

存储器的类型将决定整个嵌入式系统的操作和性能，因此存储器的选择是一个非常重要的决策。无论系统是采用电池供电还是由市电供电，应用需求将决定存储器的类型(易失性或非易失性)以及使用目的(存储代码、数据或者两者兼有)。另外，在选择过程中,存储器的尺寸和成本也是需要考虑的重要因素。